THE CAM CIRCUITS SURVEY · INTERACTIVE COMPANION
A closer look at associative memory.
Explore the designs behind Figures 6 and 7. Follow a point from device to data.
5 technologies
FIGURE 6a
Cell area vs. process node
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BEHIND THE POINTS
Designs in this view
Select a row to inspect. Reference numbers match the figure labels in the manuscript.
| Compare | Reference / cell | Paper title | Technology | Mode | Year | Node nm | Area µm² | Density bits/µm² | Search energy fJ/bit/search, reported |
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Explore circuit schematics 10 panels from Tables II and III
These are the survey’s representative circuit panels. A panel appears beside a selected design only when its citation key, technology, and cell configuration all match.
HELP EXTEND THE SURVEY
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Propose a paper with source-backed metrics and operating conditions. Submissions are reviewed on GitHub; the published 41-design snapshot stays unchanged.
Information density
Stored information is log₂(states). Density divides it by cell area. A three-state cell therefore represents approximately 1.585 bits in this metric.
density = log₂(states) / areaLayout-normalized energy
Figure 7(b) divides reported search energy by layout factor k. This is a derived comparison metric; it is not the raw energy measurement.
k = area / (node in µm)²Faithful data, interactive styling
Each view excludes missing axis values and unreported storage modes, following the released scripts. Technology colors are consistent here; the published Figure 6(b) colors points by process node.
A fixed research snapshot
The 41 released records are the survey dataset, not an exhaustive or continuously updated ranking. Devices can differ in operating conditions and evaluation methods. Voltage and match-line width are shown verbatim where recorded in the source workbook. Full array size and measured/simulated status are not recorded in dedicated fields and are left unspecified.
Read the data codebook ↗